MIT researchers have developed a new fabrication method that could enable the production of more energy efficient electronics by stacking multiple functional components on top of one existing circuit.
In traditional circuits, logic devices that perform computation, like transistors, and memory devices that store data are built as separate components, forcing data to travel back and forth between them, which wastes energy.
This new electronics integration platform allows scientists to fabricate transistors and memory devices in one compact stack on a semiconductor chip. This eliminates much of that wasted energy while boosting the speed of computation.
Key to this advance is a newly developed material with unique properties and a more precise fabrication approach that reduces the number of defects in the material. This allows the researchers to make extremely tiny transistors with built-in memory that can perform faster than state-of-the-art devices while consuming less electricity than similar transistors.
By improving the energy efficiency of electronic devices, this new approach could help reduce the burgeoning electricity consumption of computation, especially for demanding applications like generative AI, deep learning, and computer vision tasks.
“We have to minimize the amount of energy we use for AI and other data-centric computation in the future because it is simply not sustainable. We will need new technology like this integration platform to continue that progress,” says Yanjie Shao, an MIT postdoc and lead author of two papers on these new transistors.
The new technique is described in two papers (one invited) that were presented at the IEEE International Electron Devices Meeting. Shao is joined on the papers by senior authors Jesús del Alamo, the Donner Professor of Engineering in the MIT Department of Electrical Engineering and Computer Science (EECS); Dimitri Antoniadis, the Ray and Maria Stata Professor of Electrical Engineering and Computer Science at MIT; as well as others at MIT, the University of Waterloo, and Samsung Electronics.
Flipping the problem
Standard CMOS (complementary metal-oxide semiconductor) chips traditionally have a front end, where the active components like transistors and capacitors are fabricated, and a back end that includes wires called interconnects and other metal bonds that connect components of the chip.
But some energy is lost when data travel between these bonds, and slight misalignments can hamper performance. Stacking active components would reduce the distance data must travel and improve a chip’s energy efficiency.
Typically, it is difficult to stack silicon transistors on a CMOS chip because the high temperature required to fabricate additional devices on the front end would destroy the existing transistors underneath.
The MIT researchers turned this problem on its head, developing an integration technique to stack active components on the back end of the chip instead.
“If we can use this back-end platform to put in additional active layers of transistors, not just interconnects, that would make the integration density of the chip much higher and improve its energy efficiency,” Shao explains.
The researchers accomplished this using a new material, amorphous indium oxide, as the active channel layer of their back-end transistor. The active channel layer is where the transistor’s essential functions take place.
Due to the unique properties of indium oxide, they can “grow” an extremely thin layer of this material at a temperature of only about 150 degrees Celsius on the back end of an existing circuit without damaging the device on the front end.
Perfecting the process
They carefully optimized the fabrication process, which minimizes the number of defects in a layer of indium oxide material that is only about 2 nanometers thick.
A few defects, known as oxygen vacancies, are necessary for the transistor to switch on, but with too many defects it won’t work properly. This optimized fabrication process allows the researchers to produce an extremely tiny transistor that operates rapidly and cleanly, eliminating much of the additional energy required to switch a transistor between off and on.
Building on this approach, they also fabricated back-end transistors with integrated memory that are only about 20 nanometers in size. To do this, they added a layer of material called ferroelectric hafnium-zirconium-oxide as the memory component.
These compact memory transistors demonstrated switching speeds of only 10 nanoseconds, hitting the limit of the team’s measurement instruments. This switching also requires much lower voltage than similar devices, reducing electricity consumption.
And because the memory transistors are so tiny, the researchers can use them as a platform to study the fundamental physics of individual units of ferroelectric hafnium-zirconium-oxide.
“If we can better understand the physics, we can use this material for many new applications. The energy it uses is very minimal, and it gives us a lot of flexibility in how we can design devices. It really could open up many new avenues for the future,” Shao says.
The researchers also worked with a team at the University of Waterloo to develop a model of the performance of the back-end transistors, which is an important step before the devices can be integrated into larger circuits and electronic systems.
In the future, they want to build upon these demonstrations by integrating back-end memory transistors onto a single circuit. They also want to enhance the performance of the transistors and study how to more finely control the properties of ferroelectric hafnium-zirconium-oxide.
“Now, we can build a platform of versatile electronics on the back end of a chip that enable us to achieve high energy efficiency and many different functionalities in very small devices. We have a good device architecture and material to work with, but we need to keep innovating to uncover the ultimate performance limits,” Shao says.
This work is supported, in part, by Semiconductor Research Corporation (SRC) and Intel. Fabrication was carried out at the MIT Microsystems Technology Laboratories and MIT.nano facilities.
